Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy
Identifieur interne : 01BE19 ( Main/Repository ); précédent : 01BE18; suivant : 01BE20Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy
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Abstract
In molecular beam epitaxy an optical pyrometer is frequently used to determine substrate and epilayer temperatures during the growth of semiconductors. This implies a calibration of the pyrometer and a correct analysis of its indications. In this article we discuss problems presented by this calibration. We first compare the temperatures measured on the sample holder and on several substrates (GaAs, InAs, GaSb) attached to it. Then we present examples of temperature variations recorded during the growth of AlSb and GaSb on GaSb or GaAs substrates. GaSb epilayers thicker than 0.1 μm induce a 40°-60° decrease of the measured temperature. AlSb deposition on GaSb produces temperature oscillations. We discuss these variations in terms of apparent and true temperature variations. © 1995 American Vacuum Society
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Nouaoura</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Lassabatere, L" uniqKey="Lassabatere L">L. Lassabatere</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Bertru, N" uniqKey="Bertru N">N. Bertru</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Bonnet, J" uniqKey="Bonnet J">J. Bonnet</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Ismail, A" uniqKey="Ismail A">A. 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B</title><title level="j" type="main">Journal of Vacuum Science and Technology B</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Calibration</term><term>Experimental study</term><term>Gallium antimonides</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Molecular beam epitaxy</term><term>Optical pyrometers</term><term>Substrates</term><term>Temperature control</term><term>Temperature measurement</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Etude théorique</term><term>6855B</term><term>0720K</term><term>Epitaxie jet moléculaire</term><term>Substrat</term><term>Mesure température</term><term>Commande température</term><term>Pyromètre optique</term><term>Etalonnage</term><term>Gallium arséniure</term><term>Gallium antimoniure</term><term>Aluminium antimoniure</term><term>Indium arséniure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In molecular beam epitaxy an optical pyrometer is frequently used to determine substrate and epilayer temperatures during the growth of semiconductors. This implies a calibration of the pyrometer and a correct analysis of its indications. In this article we discuss problems presented by this calibration. We first compare the temperatures measured on the sample holder and on several substrates (GaAs, InAs, GaSb) attached to it. Then we present examples of temperature variations recorded during the growth of AlSb and GaSb on GaSb or GaAs substrates. GaSb epilayers thicker than 0.1 μm induce a 40°-60° decrease of the measured temperature. AlSb deposition on GaSb produces temperature oscillations. We discuss these variations in terms of apparent and true temperature variations. © 1995 American Vacuum Society</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0734-211X</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. Vac. Sci. Technol. B</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>NOUAOURA (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>LASSABATERE (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>BERTRU (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>BONNET (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>ISMAIL (A.)</s1></fA11><fA14 i1="01"><s1>Laboratoire d'Etudes des Surfaces, Interfaces et Composants, LESIC Université Montpellier II, 34095 Montpellier Cedex 5, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Faculté des Sciences I, Université Libanaise, Beirut, Lebanon</s1><sZ>5 aut.</sZ></fA14><fA20><s1>83-87</s1></fA20><fA21><s1>1995-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992B</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0122864</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of Vacuum Science and Technology B</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In molecular beam epitaxy an optical pyrometer is frequently used to determine substrate and epilayer temperatures during the growth of semiconductors. This implies a calibration of the pyrometer and a correct analysis of its indications. In this article we discuss problems presented by this calibration. We first compare the temperatures measured on the sample holder and on several substrates (GaAs, InAs, GaSb) attached to it. Then we present examples of temperature variations recorded during the growth of AlSb and GaSb on GaSb or GaAs substrates. GaSb epilayers thicker than 0.1 μm induce a 40°-60° decrease of the measured temperature. AlSb deposition on GaSb produces temperature oscillations. 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